au.\*:("GRUNTHANER, P. J")
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Chemical and electronic structure of the SiO2/Si interfaceGRUNTHANER, F. J; GRUNTHANER, P. J.Materials science reports. 1986, Vol 1, Num 2-3, pp 65-160, issn 0920-2307Article
Heavily boron-doped Si layers grown below 700˚C by molecular beam epitaxy using a HBO2 sourceLIN, T. L; FATHAUER, R. W; GRUNTHANER, P. J et al.Applied physics letters. 1989, Vol 55, Num 8, pp 795-797, issn 0003-6951, 3 p.Article
Optical constants of thin CoSi2 films on siliconWOÊLFEL, M; SCHULZ, M; IONALLY, J et al.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 2, pp 177-181, issn 0721-7250Article
Optical properties of epitaxial CoSi2 and NiSi2 films on siliconJIMENEZ, J. R; WU, Z.-C; SCHOWALTER, L. J et al.Journal of applied physics. 1989, Vol 66, Num 6, pp 2738-2741, issn 0021-8979Article
Increased effective barrier heights in Schottky diodes by molecular-beam epitaxy of CoSi2 and Ga-doped Si on Si(111)FATHAUER, R. W; LIN, T. L; GRUNTHANER, P. J et al.Journal of applied physics. 1988, Vol 64, Num 8, pp 4082-4085, issn 0021-8979Article
The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interfaceGRUNTHANER, P. J; HECHT, M. H; GRUNTHANER, F. J et al.Journal of applied physics. 1987, Vol 61, Num 2, pp 629-638, issn 0021-8979Article
Chemistry and spectroscopy of binuclear platinum diphosphite complexesCHE, C.-M; BUTLER, L. G; GRUNTHANER, P. J et al.Inorganic chemistry (Print). 1985, Vol 24, Num 26, pp 4662-4665, issn 0020-1669Article
Diffusion of Si in thin CoSi2 layersSCHOWENGERDT, F. D; LIN, T. L; FATHAUER, R. W et al.Applied physics letters. 1989, Vol 54, Num 14, pp 1314-1316, issn 0003-6951Article
Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111)LIN, T. L; FATHAUER, R. W; GRUNTHANER, P. J et al.Applied physics letters. 1988, Vol 52, Num 10, pp 804-806, issn 0003-6951Article
Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiencyHOENK, M. E; GRUNTHANER, P. J; GRUNTHANER, F. J et al.Applied physics letters. 1992, Vol 61, Num 9, pp 1084-1086, issn 0003-6951Article
Transmision electron microscopy study of the formation of epitaxial CoSi2/Si(111) by a room-temperature codeposition techniqueD'ANTERROCHES, C; NEJAT YAKUPOGLU, H; LIN, T. L et al.Applied physics letters. 1988, Vol 52, Num 6, pp 434-436, issn 0003-6951Article
